INTEGRATION OF FERROELECTRIC NONVOLATILE MEMORIES

Ferroelectric nonvolatile memories are especially attractive because o f their low-voltage, high-speed write. Although these memories use mul ticomponent metal oxide ferroelectrics and oxygen-tolerant electrode m aterials that are nonstandard in Si CMOS processing, the deposition an d etch techniques are related to conventional processes. Integration o f ferroelectric capacitors into a CMOS process flow introduces several challenges, including process damage to the ferroelectric capacitors and interface reactions between electrode materials and conventional c ircuit elements.