M. Isberg et al., PHYSICAL MODELS IN DEVICE SIMULATION OF SI POWER PIN-DIODES FOR OPTIMAL FITTING OF SIMULATION RESULTS TO MEASURED DATA, Compel, 16(3), 1997, pp. 144
Shows how a sensitivity analysis of different mobility models was carr
ied out in order to reach the best fit of simulation results to measur
ed data. Simulated data were compared to both electrical (IV-character
istics) and optical (excess charge carrier distribution) results. The
simulations included both steady state and transient investigations on
a temperature scale ranging from room temperature up to 150 degrees C
. Concerning lifetimes, a two-trap Shockley-Read-Hall (SRH) recombinat
ion model was implemented into the simulation code to be able to model
the local lifetime variations of the irradiated samples. At high carr
ier concentration, the overall dominating recombination process is the
Auger process. From experimental data the Auger coefficients seem to
be concentration dependent too, and in addition, proposes a temperatur
e dependence to the Auger coefficient.