LOWERING MELTING-POINTS OF RUTHENIUM(III)COMPLEXES AS PRECURSORS FOR METALORGANIC CHEMICAL-VAPOR-DEPOSITION

The ruthenium(III) complexes of diisobutyrylmethane (H-DIBM) and isobu tyrylpivaloylmethane(H-IBPM) gave an excellent suitability as precurso rs for metalorganic chemical vapor deposition (MOCVD). DIBM and IBPM c omplexes exhibited faster vaporization rate than the conventional-ruth enium(III) complex of dipivaloylmethane(H-DPM) at the same temperature . Since vaporization in the liquid state is possible because of low me lting point, the deposition rate of ruthenium oxide gives constant sta bility. Two materials are excellent precursors to prepare thin films b y MOCVD.