We studied the optical properties of high quality GaSb layers, grown b
y molecular beam epitaxy, in the region of the fundamental gap E-0 usi
ng thermoreflectance spectroscopy in the temperature range between 80
and 300 K. The experimental line-shapes were analyzed with a functiona
l form model including excitonic effects. Taking advantage of the deri
vative-like nature of the thermoreflectance spectroscopy, an accurate
determination of the temperature dependence of the energy gap E-0(T) i
s obtained, which is well reproduced by the semi-empirical Varshni rel
ation. (C) 1997 Elsevier Science Ltd.