METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF ALL-ALGAAS VISIBLE (SIMILAR-TO-700 NM) VERTICAL-CAVITY SURFACE-EMITTING LASERS ON MISORIENTED SUBSTRATES

We present a study on the growth of visible (similar to 700nm) vertica l-cavity surface-emitting lasers (VCSELs) by metalorganic vapor phase epitaxy. The structure was based on AlGaAs for both the quantum well a ctive region and the distributed Bragg reflectors, Photoluminescence i ntensity from AlGaAs quantum wells was optimized vs the substrate miso rientations from tile (100) surface. The doping efficiency for n-type by Si and p-type by C was studied as a function of the substrate misor ientation and the growth temperature. High-quality VCSEL materials wer e grown on (311)A substrates. The structure was processed by selective oxidation, and high-performance VCSELs emitting at similar to 700nm w ere achieved in a continuous-wave mode at room temperature.