PLASMA-ASSISTED CVD OF CUBIC BORON-NITRIDE

Single-phase cubic boron nitride films of high quality might be of gre at importance as superhard wear-resistant coatings and semiconductive materials. This paper reviews deposition techniques, precursors, depos ition parameters and substrates employed in plasma-assisted chemical v apor deposition (PACVD) of cubic boron nitride (c-BN) as well as proce dures applied for the characterization of c-BN-containing films. Mecha nisms of the formation of sp(3)-hybridized boron nitride during PACVD by use of either high-energy nitrogen and argon ions or hydrogen plasm as are discussed. All experimental results on PACVD of c-BN are though t to fit either ''physical'' or ''chemical'' routes for c-BN low-press ure synthesis, which are based on principles of c-BN physical vapor de position or diamond CVD.