HALL-EFFECT MEASUREMENTS ON ION-BOMBARDED YBACUO FILMS

High quality c-axis oriented YBaCuO films, epitaxially grown on (100) SrTiO3 substrates, were photolithographically patterned to allow Hall measurements at different temperatures 4K less than or equal to T less than or equal to 300K in magnetic fields up to B less than or equal t o 5 T aligned parallel to the surface normal. In this way, the tempera ture and field dependence of the longitudinal rho(xx)(B,T) and transve rse resistivity rho(xy)(B,T)] were determined before and after irradia tion with 350 keV He+ ions. The resulting changes of the temperature d ependence of the longitudinal resistivity, Hall resistivity and invers e Hall angle are reported.