In order to elucidate the effect of Re substitution on the carrier dop
ing level, thermoelectric power (TEP) of Hg1-xRexBa2Ca2Cu3Oy (Hg1223;
x=O.1, 0.16, 0.25) was systematically measured as a function of the Re
concentration, x, and oxygen content, y. The Seebeck coefficient (S)
of Hg1223 was found to drastically decrease by the Re-doping to the mi
nimum value at x=0.1, but to increase again by further Re-doping.