LOCALIZATION INDUCED BY IMPURITY DOPING IN HIGH-T-C SUPERCONDUCTORS

The localization in a disordered metal by means of the perturbation ap proach is considered. It is shown that in the case of a given impurity potential a small disorder leads to localization in 2D as well as in 1D, and causes the weak localization in 3D. In contrast, in the case o f the screened impurity potential by electrons (interacting electrons) the disorder effect on polarizability can significantly be suppressed by the Coulomb vertex corrections to the bare impurity vertex as show n. The application of the results to 1D - 3D are discussed.