AFM STUDY OF GROWTH OF BI2SR2-XLAXCUO6 THIN-FILMS

Authors
YANG HT TAO HJ ZHANG YZ YANG DG LI L ZHAO ZX
Citation
Ht. Yang et al., AFM STUDY OF GROWTH OF BI2SR2-XLAXCUO6 THIN-FILMS, Physica. C, Superconductivity, 282, 1997, pp. 561-562
Citations number
3
Categorie Soggetti
Physics, Applied
Journal title
Physica. C, Superconductivity → ACNP
ISSN journal
09214534
Volume
282
Year of publication
1997
Part
2
Pages
561 - 562
Database
ISI
SICI code
0921-4534(1997)282:<561:ASOGOB>2.0.ZU;2-9
Abstract
C-axis-oriented Bi2Sr1.6L0.4CuO6 thin films deposited on (100)SrTiO3, (100)LaAlO3 and (100)MgO substrates by RF-magnetron sputtering were st udied with AFM (Atomic Force Microscope). Film thickness ranged from 1 5 nm to 600 nm. Different from YBCO thin films, AFM images of Bi-2201 thin films showed a terraced island growth mode with half-unit-cell gr owth unit in c-axis.