GROWTH AND CHARACTERIZATION OF INFINITE-LAYER FILMS DOPED WITH P-TYPECARRIERS

Authors
SUN Y SUN P NIU JS SUN YG MA BK
Citation
Y. Sun et al., GROWTH AND CHARACTERIZATION OF INFINITE-LAYER FILMS DOPED WITH P-TYPECARRIERS, Physica. C, Superconductivity, 282, 1997, pp. 627-628
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Physica. C, Superconductivity → ACNP
ISSN journal
09214534
Volume
282
Year of publication
1997
Part
2
Pages
627 - 628
Database
ISI
SICI code
0921-4534(1997)282:<627:GACOIF>2.0.ZU;2-7
Abstract
Thin films of undoped and K doped (Sr,Ca)(n)CuOn+1+delta were prepared on SrTiO3, LaAlO3, MgO, ZrO2, CaNdAlO4 by pulsed laser deposition (PL D). (Sr,Ca)CuO2+delta appears at the substrate temperatures higher tha n 470 degrees C. The c-axis of (Sr,Ca)(n)CuOn+1+delta increases with d ecreasing the oxygen content delta. A resistance change at 330 degrees C relates to the variation of oxygen content delta. Resistivity measu rements show the films to have a semiconducting behavior.