FABRICATION TECHNIQUES AND ELECTRICAL-PROPERTIES OF YBA2CU3O7-X MULTILAYERS WITH RF-SPUTTERED AMORPHOUS SIO2 INTERLAYERS

Authors
AFONSO S CHEN KY XIONG Q CHAN FT SALAMO GJ COOKSEY JW SCOTT S ANG S BROWN WD SCHAPER LW
Citation
S. Afonso et al., FABRICATION TECHNIQUES AND ELECTRICAL-PROPERTIES OF YBA2CU3O7-X MULTILAYERS WITH RF-SPUTTERED AMORPHOUS SIO2 INTERLAYERS, Physica. C, Superconductivity, 282, 1997, pp. 685-686
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
Physica. C, Superconductivity → ACNP
ISSN journal
09214534
Volume
282
Year of publication
1997
Part
2
Pages
685 - 686
Database
ISI
SICI code
0921-4534(1997)282:<685:FTAEOY>2.0.ZU;2-F
Abstract
We have successfully fabricated YBa2Cu3O7-x/YSZ/SiO2/YSZ/YBa2Cu3O7-x m ultilayer structures on single crystal LaAlO3 (100), substrates. The Y Ba2Cu3O7-x(YBCO) layers were deposited using pulsed laser ablation (PL D), the biaxially aligned YSZ (250 nm thick) layers were deposited usi ng ion beam assisted PLD (IBAD-PLD), and an amorphous SiO2 (1-2 mu m) layer fabricated via rf sputtering was sandwiched between the YSZ laye rs. Fabrication techniques and characterization results are reported f or patterned layers in this work.