NEW INSULATING MATERIALS FOR HIGH-T-C SUPERCONDUCTOR DEVICE APPLICATIONS

BaTbO3 is a pseudocubic perovskite material and is proposed as a new i nsulating material for high-T-c superconductor device applications due to its compatibility with YBa2CU3O7-x. Thin films of BaTbO3 and SrTbO 3 were grown on (100) oriented SrTiO3 substrates. The growth morpholog y of several YBa2Cu3O7-x/BaTbO3/YBa2Cu3O7-x multilayer films was inves tigated by high-resolution electron microscopy (HREM). We found that a BaTbO3 layer of 4 mm thickness homogeneously and epitaxially covers a YBa2Cu3O7-x bottom layer. The interface between both materials is ato mically sharp and clean. The resistivity measured in crossover geometr y was typically more than 6 x 10(6) Omega cm below 150 K even for a 20 x 20 mu m(2) structure.