EFFECTS OF DOPING HOLE CONCENTRATION IN BISMUTH-CONTAINED SUPERCONDUCTING CUPRATES

Authors
Citation
Nh. Sinh, EFFECTS OF DOPING HOLE CONCENTRATION IN BISMUTH-CONTAINED SUPERCONDUCTING CUPRATES, Physica. C, Superconductivity, 282, 1997, pp. 873-874
Citations number
3
Categorie Soggetti
Physics, Applied
ISSN journal
09214534
Volume
282
Year of publication
1997
Part
2
Pages
873 - 874
Database
ISI
SICI code
0921-4534(1997)282:<873:EODHCI>2.0.ZU;2-8
Abstract
The relation between T-c and doping hole concentration can be controll ed by the substitution of ions Ba for Sr, Ca and ions Pb for Bi in Bi- contained superconductors. The liquid nitrogen quenching Pb doped samp les showed T-c slight higher than that of furnace-cooled samples. The T-c reached maximum values at optinum hole concentration and there are changed by doping holes from one compound to another. The parabollic dependence of T-c on the doping concentration may be universal in many high-T-c superconducting cuprates.