EVOLUTION OF THE ELECTRONIC RAMAN-SCATTERING OF HIGH-T-C SUPERCONDUCTORS WITH DOPING

Citation
G. Blumberg et al., EVOLUTION OF THE ELECTRONIC RAMAN-SCATTERING OF HIGH-T-C SUPERCONDUCTORS WITH DOPING, Physica. C, Superconductivity, 282, 1997, pp. 1017-1018
Citations number
NO
Categorie Soggetti
Physics, Applied
ISSN journal
09214534
Volume
282
Year of publication
1997
Part
2
Pages
1017 - 1018
Database
ISI
SICI code
0921-4534(1997)282:<1017:EOTERO>2.0.ZU;2-5
Abstract
For Bi2Sr2CaCu2O8+/-delta superconductors electronic Raman scattering from high-and low-energy excitations has been studied in relation to t he hole doping level, temperature and energy of the incident photons. For underdoped superconductors we conclude that: short range antiferro magnetic correlations persist with hole doping; the holes bind in loca l preformed pairs of B-1g symmetry and 600 cm(-1) binding energy; the pair concentration increases with temperature reduction until they gai n partial coherence and condense into a collective superconducting sta te.