RF GENERATED VOLTAGE ON THE FARADAY SCREEN OF AN ICRF ANTENNA AND ITSEFFECT ON THE PHAEDRUS-T EDGE PLASMA

Citation
T. Tanaka et al., RF GENERATED VOLTAGE ON THE FARADAY SCREEN OF AN ICRF ANTENNA AND ITSEFFECT ON THE PHAEDRUS-T EDGE PLASMA, Nuclear fusion, 36(12), 1996, pp. 1609-1622
Citations number
31
Categorie Soggetti
Phsycs, Fluid & Plasmas","Physics, Nuclear
Journal title
ISSN journal
00295515
Volume
36
Issue
12
Year of publication
1996
Pages
1609 - 1622
Database
ISI
SICI code
0029-5515(1996)36:12<1609:RGVOTF>2.0.ZU;2-T
Abstract
Work done on the Phaedrus-T tokamak is summarized regarding RF voltage s induced on the sides of slotted side Faraday screens (FSs). Direct i n-air measurements show voltages induced on slotted side FSs, while th eory and computer simulations suggest that these voltages are induced by radial currents on antenna feeds. Triple probe measurements In the edge region of the Phaedrus-T tokamak suggest that the induced voltage s modify edge plasma parameters and increase sheath potentials, which increase sputtering of the FS material and result in an increase of th e impurity content of the plasma. These effects of the induced voltage s can be eliminated by using insulating plates as FS side limiters.