HIGH SATURATION POWER 1.3-MU-M MQW ELECTROABSORPTION WAVE-GUIDE MODULATORS ON GAAS SUBSTRATES

Authors
KOI KK SHEN L WIEDER HH CHANG WSC
Citation
Kk. Koi et al., HIGH SATURATION POWER 1.3-MU-M MQW ELECTROABSORPTION WAVE-GUIDE MODULATORS ON GAAS SUBSTRATES, IEEE microwave and guided wave letters, 7(10), 1997, pp. 320-322
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE microwave and guided wave letters → ACNP
ISSN journal
10518207
Volume
7
Issue
10
Year of publication
1997
Pages
320 - 322
Database
ISI
SICI code
1051-8207(1997)7:10<320:HSP1ME>2.0.ZU;2-X
Abstract
An analog InGaAs/InAlAs multiple-quantum-well electroabsorption wavegu ide modulator operating at 1.32-mu m wavelength has been designed, fab ricated, and characterized for the first time on a GaAs substrate, A t ypical 3-mu m-wide 115-mu m-long device exhibits a high optical satura tion power in excess of 17 mW and a 3-dB electrical bandwidth of 20 GH z. An equivalent half-cave voltage V-pi of 2.8 V has also been achieve d.