A 2.4-GHZ SILICON-ON-SAPPHIRE CMOS LOW-NOISE AMPLIFIER

Authors
JOHNSON RA CHANG CE DELAHOUSSAYE PR WOOD ME GARCIA GA ASBECK PM LAGNADO I
Citation
Ra. Johnson et al., A 2.4-GHZ SILICON-ON-SAPPHIRE CMOS LOW-NOISE AMPLIFIER, IEEE microwave and guided wave letters, 7(10), 1997, pp. 350-352
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE microwave and guided wave letters → ACNP
ISSN journal
10518207
Volume
7
Issue
10
Year of publication
1997
Pages
350 - 352
Database
ISI
SICI code
1051-8207(1997)7:10<350:A2SCLA>2.0.ZU;2-C
Abstract
A low-noise amplifier operating at 2.4 GHz has been fabricated with MO SFET's in silicon-on-sapphire technology, The amplifier has a 2.8-dB n oise figure, IO-dB gain, and 14-dBm output referred IP3 with 14-mW pow er dissipation, The amplifier was matched for minimum noise with on-ch ip spiral inductors and capacitors.