INITIAL H2O-INDUCED OXIDATION OF SI(100)-(2X1)

Authors
WELDON MK STEFANOV BB RAGHAVACHARI K CHABAL YJ
Citation
Mk. Weldon et al., INITIAL H2O-INDUCED OXIDATION OF SI(100)-(2X1), Physical review letters, 79(15), 1997, pp. 2851-2854
Citations number
21
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
79
Issue
15
Year of publication
1997
Pages
2851 - 2854
Database
ISI
SICI code
0031-9007(1997)79:15<2851:IHOOS>2.0.ZU;2-K
Abstract
Surface infrared absorption spectroscopy and density functional cluste r calculations are used to definitively demonstrate that the Si-Si dim er bond is the target for the initial insertion of oxygen into the Si( 100)-(2 x 1) surface, following H2O exposure and annealing. This react ion, in turn, facilitates the subsequent incorporation of O into the S i backbonds, thereby promoting (local) oxidation.