ACTIVE TUNING SYSTEM ANALYZES POWER TRANSISTORS

Citation
C. Tsironis et D. Dubouil, ACTIVE TUNING SYSTEM ANALYZES POWER TRANSISTORS, Microwaves & RF, 36(10), 1997, pp. 120
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic",Telecommunications
Journal title
ISSN journal
07452993
Volume
36
Issue
10
Year of publication
1997
Database
ISI
SICI code
0745-2993(1997)36:10<120:ATSAPT>2.0.ZU;2-K
Abstract
DESIGNING power amplifiers for wireless transmitters requires accurate knowledge of the transistors that drive those amplifiers. Fortunately , effective impedance-tuning systems are available for analyzing power transistors under different load conditions, One of these, a harmonic active load-pull system (HALPS), operates from 800 to 3000 MHz in its fundamental-frequency mode. It is capable of tuning impedances at sec ond-and third-harmonic frequencies with Gamma = 1 at the on-wafer devi ce-under-test (DUT) reference plane, Through analysis and appropriate tuning of the harmonic impedances with this system, the gain and effic iency of power-transistor chips can be improved by 5 to 15 percent.