The electronic structure of CeNi1-xPdxSn has been studied by photoemis
sion spectroscopy. CeNiSn belongs to the class of Kondo insulating mat
erials. The gap formed at the Fermi level is strongly suppressed by su
bstituting Pd for Ni. The x-ray photoemission spectroscopy (XPS) valen
ce band spectra can be compared with ab initio electronic-structure ca
lculations using the linearized muffin-tin orbital (LMTO) method. We h
ave found a small indirect gap and a low density of states at the Ferm
i energy for CePdSn. The 3d XPS spectra and LMTO calculations indicate
a strong hybridization of the f orbitals with conduction band and the
interatomic hybridization which causes the large charge transfer betw
een atoms. We have also observed the correlation between the electroni
c structure near Fermi energy and the crystallographic properties of t
he alloyed CeNiSn. We also present the electronic structures of LaNiSn
, LaCuSn, and LaPdSn. These compounds are good reference for CeNiSn. A
t Fermi energy a relatively low density of states is found, for LaCuSn
an indirect gap is formed. The metallic samples show a relatively hig
h resistivity at room temperature, the largest for LaCuSn,which demons
trates the influence of the gap on the electric transport properties.