DEPTH-RESOLVED MICRO-RAMAN STUDY OF POROUS SILICON AT DIFFERENT OXIDATION-STATES

Citation
Jd. Moreno et al., DEPTH-RESOLVED MICRO-RAMAN STUDY OF POROUS SILICON AT DIFFERENT OXIDATION-STATES, Applied physics letters, 71(15), 1997, pp. 2166-2168
Citations number
21
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
71
Issue
15
Year of publication
1997
Pages
2166 - 2168
Database
ISI
SICI code
0003-6951(1997)71:15<2166:DMSOPS>2.0.ZU;2-3
Abstract
Photoluminescence (PL) and Raman spectra were measured along a cross s ection of porous silicon films at different oxidation times after appl ication of anodic current transients. The average crystallite size was determined from the Raman spectra with the standard phonon confinemen t model. Before oxidation, the PL emission energy and crystallite size were found to be independent of the layer depth. Also, the integrated PL emission was larger for the middle layers. The effect of oxidation was a blueshift of the PL band and a decrease in the integrated emiss ion for the outer layers. The crystallite size increases for all layer s, particularly the outer ones. (C) 1997 American Institute of Physics .