INVESTIGATION OF THE EARLY STAGES OF ZNSE EPITAXY ON GAAS(001) VIA SCANNING-TUNNELING-MICROSCOPY

We present a scanning tunneling microscopy (STM) study of the initial stages of ZnSe deposition on the GaAs(001)-(2 X 4) surface. The deposi tion of elemental Se and of ZnSe an the bare GaAs surface induces cons iderable atomic disorder attributed to the Se-As exchange reaction. Th e deposition of elemental Zn weakens the 2X periodicity of the surface but induces no apparent changes in the STM images of the As dimers. C omparison of STM images of submonolayers of ZnSe on GaAs with and with out a Zn pretreatment suggests that Zn reduces the interaction of Se w ith the GaAs surface. (C) 1997 American Institute of Physics.