PHOTOLUMINESCENCE FROM C-IMPLANTED SINXOY FILMS GROWN ON CRYSTALLINE SILICON()

Authors
LIAO LS XIONG ZH ZHOU X LIU XB HOU XY
Citation
Ls. Liao et al., PHOTOLUMINESCENCE FROM C-IMPLANTED SINXOY FILMS GROWN ON CRYSTALLINE SILICON(), Applied physics letters, 71(15), 1997, pp. 2193-2195
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
71
Issue
15
Year of publication
1997
Pages
2193 - 2195
Database
ISI
SICI code
0003-6951(1997)71:15<2193:PFCSFG>2.0.ZU;2-J
Abstract
Carbon ions at an energy of 35 keV with a dose of 5 X 10(16) cm(-2) we re implanted into SiNxOy films grown on crystalline silicon by plasma enhanced chemical vapor deposition. Intense photoluminescence (PL) pea ked at about 550 nm is observed in the implanted films under an excita tion of 441.6 nm laser line. The PL intensity varies with annealing te mperature, and reaches a maximum at the annealing temperature of 600 d egrees C. The luminescence may originate from the complex of Si, N, O, and C in the films. (C) 1997 American Institute of Physics.