NOVEL METHOD FOR FABRICATION OF INTEGRATED RESISTORS ON BILAYER AG YBA2CU3O7 FILMS USING NI IMPLANTATION/

A novel ion implantation method is described for fabricating low induc tance integrated resistors on Ag/YBa(2)Cu(3)O7 (YBCO) bilayer thin fil ms. Parallel high and low value resistors were simultaneously formed b y patterning bilayer films into 10-mu m-wide lines, then masking and i mplanting with Ni to selectively inhibit superconductivity in YBCO. Lo w value resistors (<1 Ohm/sq) were formed at 77 K as the supercurrent bypassed the Ni-doped nonsuperconducting YBCO and was shunted through the overlying low resistivity Ag metal. High value resistors (20-140 O hm/sq) were formed by removing Ag from above the implanted YBCO forcin g the current through the implanted YBCO region. The sheet resistance of both types of resistors was found to increase systematically with i ncreasing Ni implant energy. (C) 1997 American Institute of Physics.