RAMAN-SCATTERING CRITERIA FOR CHARACTERIZATION OF ANNEAL-RESTORED ZINC BLENDE SINGLE-CRYSTALS - APPLICATION TO SI-IMPLANTED INP()

We have studied the lattice recovery by rapid thermal annealing of Si-implanted InP using Raman spectroscopy. The crystallinity recovery fo r different annealing temperatures of samples totally amorphized by th e implantation can be monitored by means of their Raman spectra. Howev er, free-charge coupling with the LO mode and possible misorientation of the recrystallized material may alter substantially the first-order Raman spectrum, making it unreliable for a good characterization of t he lattice recovery. The study of second-order Raman spectrum overcome s the problems present in the analysis of first-order Raman spectrum a nd provides suitable criteria to assess the recrystallization of the i mplanted and annealed samples. After rapid thermal annealing at 875 de grees C for 10 s, the intensity of the second-order peaks approaches 7 0% of its value in virgin InP, and third-order Raman peaks are also cl early detected, evidencing the good lattice recovery achieved. (C) 199 7 American Institute of Physics.