DEEP-LEVEL OF IRON-HYDROGEN COMPLEX IN SILICON

Deep levels related to iron in n-type silicon have been investigated u sing thermally stimulated capacitance (TSCAP) combined with minority c arrier injection. The TSCAP measurement reveals two traps of E-V + 0.3 1 and E-V + 0.41 eV. The trap of E-V + 0.41 eV is a donor due to inter stitial iron. The trap of E-V + 0.31 eV, due to a complex of interstit ial iron and hydrogen, is observed in the sample etched chemically wit h an acid mixture containing HF and HNO3 and annihilates after anneali ng at 175 degrees C for 30 min. It is demonstrated that interstitial 3 d transition metals such as vanadium, chromium, and iron tend to form complexes with hydrogen in n-type silicon, and the complexes induce do nor levels below the donor levels of the isolated interstitial species . This trend is related to the interaction between the metals and hydr ogen in the complexes. (C) 1997 American Institute of Physics.