S. Fafard, WAVE-FUNCTION ENGINEERING FOR ENHANCED QUANTUM-WELL INTERMIXING AND INTEGRATED INFRARED SPECTROMETERS, Journal of applied physics, 82(8), 1997, pp. 3857-3860
Quantum well potentials are engineered to control the energy level shi
fts induced by semiconductor alloy intermixing. A few monolayers of a
semiconductor with a different band gap can lie inserted at the node o
r at the crest of wavefunctions with different parities to enhance the
interdiffusion-induced interband transition energy-shifts, or to mani
pulate the intersubband transition energies. (C) 1997 American Institu
te of Physics.