EFFECTS OF H, OH, AND CH3 RADICALS ON DIAMOND FILM FORMATION IN PARALLEL-PLATE RADIO-FREQUENCY PLASMA REACTOR

Citation
M. Ikeda et al., EFFECTS OF H, OH, AND CH3 RADICALS ON DIAMOND FILM FORMATION IN PARALLEL-PLATE RADIO-FREQUENCY PLASMA REACTOR, Journal of applied physics, 82(8), 1997, pp. 4055-4061
Citations number
23
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
82
Issue
8
Year of publication
1997
Pages
4055 - 4061
Database
ISI
SICI code
0021-8979(1997)82:8<4055:EOHOAC>2.0.ZU;2-K
Abstract
Diamond films were successfully synthesized in both parallel-plate rad io frequency (rf: 13.56 MHz) CH4 and CH3OH plasmas with injection of H and OH radicals generated in the remote microwave (2.45 GHz) H-2/H2O plasma. Effects of H, OH, and CH3 radicals on the diamond film formati on in the rf plasma reactor were investigated by the formation of diam ond films employing radical injection technique and the measurement of density in the plasma. Under the condition of diamond film formation, CH3 density was measured by infrared diode laser absorption spectrosc opy (IRLAS). The kinetics of CH3 in rf CH4 and CH3OH plasmas with inje ction of H and OH radicals were evaluated from the results of optical emission spectroscopy and lifetime of CH3 radicals estimated by IRLAS. (C) 1997 American Institute of Physics.