HYBRID ORGANIC-INORGANIC SEMICONDUCTOR-BASED LIGHT-EMITTING-DIODES

We demonstrate that the ability of GaN-based light-emitting diodes to emit in the shea-wavelength regime makes possible ''hybrid'' organic-i norganic semiconductor light-emitting diodes that consist of two parts : a GaN-based electroluminescent part and an organic thin-film-based f luorescent part that absorbs the electroluminescence and fluoresces at a longer wavelength resulting in color conversion. We also show that organic films with much improved surface smoothness may be obtained by deposition at reduced temperatures. (C) 1997 American Institute of Ph ysics.