SATURATION OF 1 F NOISE-LEVEL OF SUPERCONDUCTOR-CONSTRICTIONS-SUPERCONDUCTOR MESOSCOPIC DEVICES/

Citation
A. Saito et al., SATURATION OF 1 F NOISE-LEVEL OF SUPERCONDUCTOR-CONSTRICTIONS-SUPERCONDUCTOR MESOSCOPIC DEVICES/, Physica. C, Superconductivity, 282, 1997, pp. 2399-2400
Citations number
6
Categorie Soggetti
Physics, Applied
ISSN journal
09214534
Volume
282
Year of publication
1997
Part
4
Pages
2399 - 2400
Database
ISI
SICI code
0921-4534(1997)282:<2399:SO1FNO>2.0.ZU;2-P
Abstract
Low frequency noise properties of all-thin film superconductor-constri ctions-superconductor devices have been investigated. We first found t hat the magnitude of 1/f noise level rapidly decreases with increasing the device quality factor Q(-1) and saturates for Q(-1)greater than o r equal to 2. From Hooge theory [1] this saturation phenomena indicate s that the number of carriers in the system no longer changes for Q(-1 )greater than or equal to 2.