THE ROLE OF PAIR SYMMETRY AND INTRINSIC SURFACE DEPRESSION OF THE ORDER-PARAMETER ON THE CRITICAL-CURRENT OF HIGH-TC SIS AND SIS JOSEPHSON-JUNCTIONS

Two recent models trying to explain the reasons of I-c(T) values much lower than Ambegaokar-Baratoff [AB] model's expectations in I-ITS SIS and SIS' Josephson junctions (JJs) are compared: one allowing for a mi xed (s + id)-wave pair symmetry and the other one, developed by us, th at considers a pure s-wave pair symmetry plus a suitable gap depressio n at Superconductor-Insulator [S-I] interfaces. Different from the for mer, the latter yields good matching with I-c(T)R-N(ev)(T) results bot h in our break-junctions and in planar, step-edge and grain-boundary J Js from literature.