EPITAXIAL DEPOSITION AND PERFORMANCE OF THE HIGH-TC BIEPITAXIAL GRAIN-BOUNDARY JUNCTIONS

Authors
CHEN LF YANG J GU HW MA P YUAN GS CHANG SA LI L CHEN L YANG T
Citation
Lf. Chen et al., EPITAXIAL DEPOSITION AND PERFORMANCE OF THE HIGH-TC BIEPITAXIAL GRAIN-BOUNDARY JUNCTIONS, Physica. C, Superconductivity, 282, 1997, pp. 2413-2414
Citations number
2
Categorie Soggetti
Physics, Applied
Journal title
Physica. C, Superconductivity → ACNP
ISSN journal
09214534
Volume
282
Year of publication
1997
Part
4
Pages
2413 - 2414
Database
ISI
SICI code
0921-4534(1997)282:<2413:EDAPOT>2.0.ZU;2-9
Abstract
High quality biepitaxial YBCO superconducting thin films with 45 degre es artificial grain boundary have been fabricated on SITiO3(STO) subst rate by magnetron sputtering. The formation of multilayer structure an d epitaxial oriented relationships of every layer film were demonstrat ed by TEM, theta similar to 2 theta scan, Phi scan and omega -scan (ro cking curve). The I-V characteristic of the biepitaxial YBCO grain bou ndary Junction consists with the RSJ model and the distinct shapiro st eps can be observed.