ELECTRICAL-PROPERTIES OF A BA1-XKXBIO3NB-DOPED SRTIO3 SCHOTTKY JUNCTION

Current-voltage properties for a Ba1-xKxBiO3/Nb-doped SrTiO3 (0.01 wt% ) Schottky junction have been measured and investigated over a tempera ture range from 5.3 to 300 K. Excellent rectification properties of th e junction were observed, with high reproducibility. The barrier heigh t V omega decreased and the ideality factor n increased with decreasin g temperature. The modified Richardson plot of saturation current dens ity showed a straight-line dependence. These results may be explained by the existence of interfacial layer or the inhomogeneity of the Scho ttky barrier height.