A POSSIBLE NEW DEVICE - THE SEMICONDUCTOR QUANTUM WELL-SUPERCONDUCTORJUNCTION

Authors
MA GC DAI XX
Citation
Gc. Ma et Xx. Dai, A POSSIBLE NEW DEVICE - THE SEMICONDUCTOR QUANTUM WELL-SUPERCONDUCTORJUNCTION, Physica. C, Superconductivity, 282, 1997, pp. 2509-2510
Citations number
5
Categorie Soggetti
Physics, Applied
Journal title
Physica. C, Superconductivity → ACNP
ISSN journal
09214534
Volume
282
Year of publication
1997
Part
4
Pages
2509 - 2510
Database
ISI
SICI code
0921-4534(1997)282:<2509:APND-T>2.0.ZU;2-L
Abstract
In this paper a semiconductor double barrier-quantum well-superconduct or (DBQS) junction is proposed and the I-V characteristics is obtained respectively by Bardeen's transfer Hamiltonian and Andreev reflection method. The result shows that the I-V curve of DBQS junction exhibits negative differential resistance. It is suggested that this effect ca n be used to fabricate new device.