LIGHT POINT-DEFECTS ON HYDROGEN ANNEALED SILICON-WAFER

In observing 0.1 mu m in size light point deeds (LPDs) in Czochralski- grown silicon wafers in hydrogen annealing by scatterometer (Surfscan( R) SP1 and Surfscan 6200 from Tencor Instrument), we have found that t he hydrogen annealed wafer has fewer defects on the surface, compared with a polished wafer. Assuming that LPDs are equal to Crystal Origina ted Particles (COPs) which are oxygen precipitates and/or vacancy-type defects, LPDs can therefore be reduced by evaporating oxygen from the surface, and migrating silicon-atoms onto the surface during hydrogen annealing at 1200 degrees C for 1 h.