INGAN LASER-DIODE GROWN ON 6H-SIC SUBSTRATE USING LOW-PRESSURE METAL-ORGANIC VAPOR-PHASE EPITAXY

InGaN multiple quantum well (MQW) laser diodes mere fabricated on (000 1)Si oriented 6H-SiC substrate using low-pressure metal organic vapor phase epitaxy (LP-MOVPE). The laser oscillation was observed above the threshold current of 800 mA at a peak wavelength of 414.3 nm under pu lsed current injection at room-temperature. The pulse duration was 300 ns and the repetition frequency was 1 kHz, The threshold current dens ity and differential efficiency were estimated to be 16 kA/cm(2) and 0 .03 W/A, respectively. The full width at half maximum (FWHM) of the la sing emission lines was between 0.03 nm and 0.21 nm. Streak-shaped far field patterns mere clearly observable. The lifetime of the laser dio de was more than 5 hours.