SINGLE-ELECTRON TRANSISTORS (SETS) WITH NB NB OXIDE SYSTEM FABRICATEDBY ATOMIC-FORCE MICROSCOPE (AFM) NANO-OXIDATION PROCESS/

Authors
SHIRAKASHI J MATSUMOTO K MIURA N KONAGAI M
Citation
J. Shirakashi et al., SINGLE-ELECTRON TRANSISTORS (SETS) WITH NB NB OXIDE SYSTEM FABRICATEDBY ATOMIC-FORCE MICROSCOPE (AFM) NANO-OXIDATION PROCESS/, JPN J A P 2, 36(9AB), 1997, pp. 1257-1260
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
36
Issue
9AB
Year of publication
1997
Pages
1257 - 1260
Database
ISI
SICI code
Abstract
An atomic force microscope (AFM)-based anodic oxidation technique, whi ch is based on selective oxidation of metal thin Blm by anodization, w as developed for the fabrication of niobium (Nb)/Nb oxide-based ultra- small tunnel junction devices. Double junction devices without any gat e structures and double junction SETs with side-gate structure were fa bricated using this technique, and single-electron charging effects we re clearly observed at 100K.