SYNTHESIS AND CHARACTERIZATION OF YSZ THIN-FILM ELECTROLYTES

Dense, homogeneous and crack-free thin films (0.2-2 mum in thickness) of (ZrO2)0.84(YO1.5)0.16 (YSZ) were deposited on porous or dense subst rates, at temperatures not exceeding 600-degrees-C, using a solution-d eposition technique. The structural evolution and microstructure of th e deposited films were investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM). Raman spectroscopy revealed the pr esence of fine-grain cubic YSZ at annealing temperatures as low as 600 -degrees-C. Grain growth occurred at higher temperatures as detected b y atomic force microscopy (AFM). ac impedance spectroscopy was used to study the electrical characteristics of the YSZ films as a function o f temperature. The ionic conductivity and activation energy of the dep osited film are similar to YSZ bulk material, but no grain-boundary ef fect was observed in the film. The deposited films may be considered f or electrolyte application in intermediate temperature solid oxide fue l cells (SOFCs).