GROWTH AND CHARACTERIZATION OF CLOSE-SPACED VAPOR TRANSPORT GAAS-LAYERS, USING ATOMIC-HYDROGEN AS THE INITIAL REACTANT

Citation
E. Gomez et al., GROWTH AND CHARACTERIZATION OF CLOSE-SPACED VAPOR TRANSPORT GAAS-LAYERS, USING ATOMIC-HYDROGEN AS THE INITIAL REACTANT, Revista Mexicana de Fisica, 43(5), 1997, pp. 785-794
Citations number
24
Categorie Soggetti
Physics
Journal title
ISSN journal
0035001X
Volume
43
Issue
5
Year of publication
1997
Pages
785 - 794
Database
ISI
SICI code
0035-001X(1997)43:5<785:GACOCV>2.0.ZU;2-W
Abstract
The close-spaced vapor transport technique was used to grow a set of G aAs homolayers. The transport agent was atomic hydrogen. The layers we re grown leaving fixed all growth parameters except for the spacer thi ckness delta. Scanning electron microscopy, energy dispersive spectros copy, and photoluminescence were used to characterize the layers. It i s found a phenomenological relationship among the spacer thickness, th e growth rate and the surface morphology. The energy dispersive Spectr oscopy analysis performed on these layers indicates that all present s urfaces with Ga-stabilized structures because of the high temperature effect and the atomic hydrogen interaction with the source and the sub strate during the growth processes. By photoluminescence measurements is shown that all samples except for the one with polycrystalline surf ace morphology have better quality than the substrate, the spectra sho w a dominant near-gap emission at 1.513 eV at 23.5 K. It is observed a lso that the near-gap emission of the film grown with the smallest spa cer thickness is more efficient. From the performed measurements we co nclude that the only contaminant in these layers is carbon.