ATOMIC AND MOLECULAR PROCESSES ON SI(001) AND SI(111) SURFACES

Despite the fact that remarkable progress has been made in the determi nation of the static atomic structures of Si surfaces, the kinetic and dynamic aspects of these surfaces are not yet well understood. A brie f review is given on the theoretical studies of kinetic and dynamic pr operties based on first-principles computer simulations, focusing on t he initial stage of homoepitaxial crystal growth on Si(001) and the lo w-temperature dynamics of Si(111)-7 x 7. (C) 1997 Elsevier Science B.V .