DIRECT GA DEPOSITION BY LOW-ENERGY FOCUSED ION-BEAM SYSTEM

Ga droplets were formed in line on a sulfur-terminated GaAs surface us ing a low-energy focused ion beam. Ga ions, picked from a liquid Ga io n source, were accelerated up to 10 kV to produce a focused ion beam. Subsequently, the ions were given a positive bias to reduce their kine tic energy by retarding lenses. The Ga ions softly landed on the surfa ce and formed a series of Ga droplets. This method was found to be use ful in making fine structures directly on semiconductor materials. (C) 1997 Elsevier Science B.V.