ABOVE BANDGAP DIELECTRIC FUNCTION OF EPITAXIAL ZNSE LAYERS

To obtain reference-quality approximations to tile bulk dielectric fun ction of ZnSe from 2.7 to 6.0 eV at room temperature, we optimized the surface abruptness by performing in-situ chemical etching-procedures during an ellipsometric measurement. By comparing our results to spect ra recently reported, we find that the chemical-etching procedure used in previous research did not completely remove the overlayers and tha t the assumptions underlying the mathematical removal of overlayers we re not sufficiently accurate.