OPTICAL DETERMINATION OF VALENCE-BAND CONFIGURATION AND CARRIER EFFECTIVE-MASS IN IN0.08GA0.92AS GAAS QUANTUM-WELLS/

Authors
LEE KS KWON OK JEONG BS HAN WS LEE B LEE EH KIM Y LEE CD NOH SK
Citation
Ks. Lee et al., OPTICAL DETERMINATION OF VALENCE-BAND CONFIGURATION AND CARRIER EFFECTIVE-MASS IN IN0.08GA0.92AS GAAS QUANTUM-WELLS/, Journal of the Korean Physical Society, 31(4), 1997, pp. 693-698
Citations number
25
Categorie Soggetti
Physics
Journal title
Journal of the Korean Physical Society → ACNP
ISSN journal
03744884
Volume
31
Issue
4
Year of publication
1997
Pages
693 - 698
Database
ISI
SICI code
0374-4884(1997)31:4<693:ODOVCA>2.0.ZU;2-T
Abstract
We have determined the valence-band structure and heavy-hole effective mass of In-0.08 Ga-0.92 As/GaAs quantum wells by using photoreflectan ce and magnetophotoluminescence spectroscopy. A comparison between the experimental results for the interband transitions and the theoretica l calculations indicated that the heavy-hole band offset was 35+/-5% a nd that the configuration of the quantum well for Light-hole states wa s type II. From the diamagnetic shifts of the magnetoexciton ground st ate, we found that the heavy-hole in-plane mass was 0.19 m(0).