EXCITONIC ORIGIN OF FEMTOSECOND NONLINEARITY NEAR THE BANDGAP OF A COMMERCIAL CDSSE SEMICONDUCTOR-DOPED GLASS

Citation
Ys. Lim et al., EXCITONIC ORIGIN OF FEMTOSECOND NONLINEARITY NEAR THE BANDGAP OF A COMMERCIAL CDSSE SEMICONDUCTOR-DOPED GLASS, Journal of the Korean Physical Society, 31(4), 1997, pp. 717-721
Citations number
32
Categorie Soggetti
Physics
ISSN journal
03744884
Volume
31
Issue
4
Year of publication
1997
Pages
717 - 721
Database
ISI
SICI code
0374-4884(1997)31:4<717:EOOFNN>2.0.ZU;2-N
Abstract
To determine the origin of the nonlinearity near the bandgap of II-VI commercial semiconductor-doped glasses (SDG) with no apparent excitoni c features, we studied the temperature dependence of the dephasing tim e near the bandgap using degenerate four-wave mixing (FWM). The deduce d coupling constant with LO phonons was comparable, or nearly equal, t o the exciton-LO phonon coupling constants in other II-VI semiconducto rs and quantum wells. We contend that the nonlinearity observed in FWM is due to excitons, whose features in absorption are overshadowed by the inhomogeneity in the crystal sizes.