RANS-TRANS-2,5-BIS-[2-(5-(2,2'-BITHIENYL))ETHENYL] THIOPHENE - SYNTHESIS, CHARACTERIZATION, THIN-FILM DEPOSITION AND FABRICATION OF ORGANICFIELD-EFFECT TRANSISTORS

s-2,5-Bis-[2-{5-(2,2'-bithienyl)}ethenyl]thiophene (BTET) was synthesi zed and then purified in a gradient sublimation system. It was charact erized using IR, UV-Vis and mass spectroscopy, and elemental analysis. BTET films were deposited with molecular beam deposition (MBD) or spi n-coating from solution. Insulated-gate field-effect transistor (IGFET ) devices based on such films were used to study their electrical tran sport properties. A field-effect mobility of 0.01 cm(2) V-1 s(-1) was measured from films deposited with MBD, while the mobility of the spin -coated films was slightly above 0.001 cm(2) V-1 s(-1). (C) Published by 1997 Elsevier Science S.A.