CALCULATION OF ELECTRONIC POTENTIAL-ENERGY DISTRIBUTIONS AND PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON HYDROGENATED AMORPHOUS-SILICON NITRIDE SUPERLATTICES

A model is proposed for calculating the electronic potential energy di stribution and the temperature dependence of photoconductivity (PC) in hydrogenated amorphous silicon/hydrogenated amorphous silicon nitride superlattices. The Simmons-Taylor theory and the occupation statistic s of correlated defects are used to describe band-tail and dangling-bo nd states. The electronic potential energy and charge distributions re sulting from space-charge doping are calculated for various amounts of transferred charge and different asymmetrical boundary conditions. Th e dark conductivity (DC) and the PC are calculated for the correspondi ng spatial potential energy distributions. It is found that the enhanc ement of DC and PC in the superlattices are mainly deter-mined by the amount of injected charge, the influence of interface asymmetry being slight.