MECHANISM OF BIAXIAL ALIGNMENT OF OXIDE THIN-FILMS DURING ION-BEAM-ASSISTED DEPOSITION

The mechanism of biaxial alignment was examined for yttria-stabilized zirconia (YSZ) and La1-xCaxMnO3 (LCMO) films that were fabricated by i on-beam-assisted deposition (LEAD). Films that were deposited with bot h dual-ion-beam deposition and ion-assisted electron-beam evaporation were studied. The film texture formation was mostly dependent on the r atio of ion bombardment to molecule arrival and on the angle of the in cident ions with respect to the substrate. Results were not dependent on the deposition technique. The observed IBAD YSZ and IBAD LCMO biaxi al alignment did not occur because of ion channeling. It has been show n that the preferred film orientation develops because of anisotropy o f ion-induced damage on various crystal surfaces.