OPTICAL STUDIES ON THE DEPOSITION OF CARBON NITRIDE FILMS BY LASER-ABLATION

The wavelength dependence of the generation of precursor radicals in t he pulsed laser deposition of carbon nitride films has been studied by optical emission. Raman, and Fourier Transform Infrared (FTIR) spectr oscopy have been used for characterization of the deposited films. The dispersed emission from the laser-induced plasma plume on a graphite target demonstrated a high concentration of excited C-2 radicals when the 355 and 1064 nm outputs of a Nd:YAG laser were applied. While for the 532 nm ablation, a relatively higher concentration of excited atom ic carbon was obtained. Different Raman and FTIR spectral features wer e observed from the deposited films with different ablation wavelength s. The 532 nm laser ablation is proposed for the synthesis of high qua lity carbon nitride films.