RIBE OF 10-MU-M THICK ALUMINUM FILMS FOR MICROELECTROMECHANICAL DEVICES

A low-temperature etching process of 10 mu m thick aluminum films is p roposed. A reactive ion beam etching (RIBE) process with pure chlorine has provided the basis for this investigation. An etch rate of about 75 nm min(-1) and nearly vertical sidewalls have been obtained. the me thod can be useful to define small local patterns in addition to other elaboration processes such as electrodeposition.